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| AP4506GEM RoHS-compliant Product Advanced Power Electronics Corp. Simple Drive Requirement Low On-resistance Fast Switching Performance S2 D2 D1 D1 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) G2 30V 30m 6.4A -30V 40m -6A ID P-CH BVDSS RDS(ON) ID SO-8 G1 S1 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design,low on-resistance and costeffectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D1 G1 G2 D2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 +20 6.4 5.1 30 2.0 -55 to 150 -55 to 150 P-channel -30 +20 -6.0 -4.8 -30 Units V V A A A W Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.5 Unit /W Data and specifications subject to change without notice 1 200902103 AP4506GEM N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=6A VGS=4.5V, ID=4A Min. 30 1 - Typ. 17 8.3 1.5 4 6 5.6 17 3.6 575 100 70 Max. Units 30 36 3 1 25 +30 13 920 V m m V S uA uA uA nC nC nC ns ns ns ns pF pF pF VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=24V, VGS=0V VGS=+20V, VDS=0V ID=6A VDS=24V VGS=4.5V VDS=15V ID=1A RG=3.3,VGS=10V RD=15 VGS=0V VDS=25V f=1.0MHz Drain-Source Leakage Current (T j=70 C) VDS=24V, VGS=0V Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=1.5A, VGS=0V IS=6A, VGS=0V dI/dt=100A/s Min. - Typ. 19 14 Max. Units 1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge 2 AP4506GEM P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Test Conditions VGS=0V, ID=-250uA 2 Min. -30 -1 - Typ. 12 12.6 2.4 6.2 7 5.6 24 35 220 150 Max. Units 40 52 -3 -1 -25 +30 20 V m m V S uA uA uA nC nC nC ns ns ns ns pF pF pF VGS=-10V, ID=-5A VGS=-4.5V, ID=-3A VDS=VGS, ID=-250uA VDS=-10V, ID=-5A VDS=-24V, VGS=0V VGS=+20V, VDS=0V ID=-5A VDS=-24V VGS=-4.5V VDS=-15V ID=-1A RG=3.3,VGS=-10V RD=15 VGS=0V VDS=-20V f=1.0MHz Drain-Source Leakage Current (T j=70 C) VDS=-24V, VGS=0V Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 1045 1670 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-1.5A, VGS=0V IS=-5A, VGS=0V dI/dt=-100A/s Min. - Typ. 23 15 Max. Units -1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in copper pad of FR4 board , t <10sec ; 135/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 3 AP4506GEM N-Channel 30 30 T A = 25 C ID , Drain Current (A) o ID , Drain Current (A) 10V 7.0V 5.0V 4.5V V G =3.0V T A = 150 C o 10V 7.0V 5.0V 4.5V V G =3.0V 20 20 10 10 0 0 1 2 3 4 5 0 0 1 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 28 1.8 ID=4A 26 T A =25 o C Normalized RDS(ON) ID=6A V G =10V 1.6 RDS(ON) (m) 24 1.4 22 1.2 20 1.0 18 16 2 4 6 8 10 0.8 25 50 75 100 125 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 10 8 Normalized VGS(th) (V) 1.2 IS(A) 6 T j =150 o C 4 T j =25 o C 0.8 2 0 0 0.2 0.4 0.6 0.8 1 1.2 0.4 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4 AP4506GEM N-Channel f=1.0MHz 12 1000 VGS , Gate to Source Voltage (V) I D =6A V DS =24V 8 C iss C (pF) 100 C oss C rss 4 0 0 5 10 15 20 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 10 100us ID (A) 1ms 1 0.2 0.1 0.1 0.05 10ms 100ms 0.1 PDM t 0.02 T Duty factor = t/T Peak Tj = PDM x Rthja + T a 1s T A =25 o C Single Pulse DC 1 10 100 0.01 Single Pulse Rthja=135 oC/W 0.01 0.1 0.01 0.001 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 5 AP4506GEM P-Channel 30 30 T A = 25 C -ID , Drain Current (A) o -ID , Drain Current (A) -10V -7.0V -5.0V -4.5V V G = - 3.0V T A = 150 C o -10V -7.0V -5.0V -4.5V 20 20 V G = - 3.0V 10 10 0 0 1 2 3 4 5 0 0 1 2 3 4 5 6 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 44 1.6 I D = -3 A 40 T A = 25 o C Normalized RDS(ON) I D = -5A V G = -10V 1.4 RDS(ON) (m) 36 1.2 32 1.0 28 0.8 24 2 4 6 8 10 0.6 -50 0 50 100 150 -V GS ,Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 10 8 Normalized -VGS(th) (V) 1.2 1.2 -IS(A) 6 T j =150 o C 4 T j =25 o C 0.8 2 0 0 0.2 0.4 0.6 0.8 1 0.4 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6 AP4506GEM P-Channel 12 10000 f=1.0MHz -VGS , Gate to Source Voltage (V) I D = -5 A V DS = -24 V 8 1000 C iss C (pF) C oss C rss 100 4 0 0 10 20 30 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 10 100us 1ms 0.2 -ID (A) 1 10ms 100ms 0.1 0.1 0.05 PDM t 0.02 0.01 0.1 1s T Duty factor = t/T Peak Tj = PDM x Rthja + T a Single Pulse T c =25 C Single Pulse 0.01 0.1 1 10 o DC 100 Rthja=135 oC/W 0.01 0.001 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V 10% VGS td(on) tr td(off) tf QGS QGD Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 7 |
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